Infineon Technologies AG Memory IS29GL256S-10DHB02-TR

Description
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 100ns 64-FBGA (9x9)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 100ns 64-FBGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL256S-10DHB02-TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 100ns 64-FBGA (9x9)

FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 100ns 64-FBGA (9x9)

Buy Now Datasheet
IC FLASH 256MBIT PARALLEL 64FBGA

IC FLASH 256MBIT PARALLEL 64FBGA

Supplier's Site Datasheet
FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS29GL256S-10DHB02-TR-ND IS29GL256S-10DHB02-TR IS29GL256S-10DHB02-TR
Product Name Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
5V Memory IC and Storage Component - 774-MBM29F800BA-70PFTN-SFLE1 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 70 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 27C256T-20/L271 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory IC and Storage Component - 736-DP8420AV-20 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers