Cypress Semiconductor Corp. Memory S34ML01G100TFI503

Description
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML01G100TFI503 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP

FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML01G100TFI503 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML01G100TFI503
Integrated Circuits (ICs) - Memory - Memory S34ML01G100TFI503
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML01G100TFI503 S34ML01G100TFI503
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Memory - 71016S12PH - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details