Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory S29GL512S11TFI010

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Integrated Circuits (ICs) - Memory - S29GL512S11TFI010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S29GL512S11TFI010
Integrated Circuits (ICs) - Memory S29GL512S11TFI010
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
 - S29GL512S11TFI010 - Rochester Electronics
Newburyport, MA, United States
S29GL512S - 512-Mbit (64 Mbyte), 3.0V, GL-S Flash Memory

S29GL512S - 512-Mbit (64 Mbyte), 3.0V, GL-S Flash Memory

Supplier's Site Datasheet
Memory - Flash - S29GL512S11TFI010 - 813154-S29GL512S11TFI010 - Win Source Electronics
Yishun, Singapore
Memory - Flash - S29GL512S11TFI010
813154-S29GL512S11TFI010
Memory - Flash - S29GL512S11TFI010 813154-S29GL512S11TFI010
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 813154-S29GL512S11TF I010 Packaging: Tray Mounting Style: SMD Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 512Mb (32M x 16) Access Time: 110ns Supplier Device Package: 56-TSOP Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Manufacturer Package: 56-TFSOP (0.724", 18.40mm Width) Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 91 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 813154-S29GL512S11TFI010
Packaging: Tray
Mounting Style: SMD
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 110ns
Supplier Device Package: 56-TSOP
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Manufacturer Package: 56-TFSOP (0.724", 18.40mm Width)
Popularity: Low
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 91
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V

Supplier's Site
 - 1255887P - RS Components, Ltd.
Corby, Northants, United Kingdom
High performance. Fast random-access and high bandwidth Memory Size = 512Mbit Interface Type = CFI, Parallel Package Type = TSOP Pin Count = 56 Organisation = 32M x 16 bit Mounting Type = Surface Mount Cell Type = NOR Minimum Operating Supply Voltage = 2.7 V Maximum Operating Supply Voltage = 3.6 V Length = 18.5mm Delivery on production packaging - Punnet. This product is non-returnable.

High performance. Fast random-access and high bandwidth
Memory Size = 512Mbit
Interface Type = CFI, Parallel
Package Type = TSOP
Pin Count = 56
Organisation = 32M x 16 bit
Mounting Type = Surface Mount
Cell Type = NOR
Minimum Operating Supply Voltage = 2.7 V
Maximum Operating Supply Voltage = 3.6 V
Length = 18.5mm
Delivery on production packaging - Punnet. This product is non-returnable.

Supplier's Site
 - 1255887 - RS Components, Ltd.
Corby, Northants, United Kingdom
High performance. Fast random-access and high bandwidth Memory Size = 512Mbit Interface Type = CFI, Parallel Package Type = TSOP Pin Count = 56 Organisation = 32M x 16 bit Mounting Type = Surface Mount Cell Type = NOR Minimum Operating Supply Voltage = 2.7 V Maximum Operating Supply Voltage = 3.6 V Length = 18.5mm

High performance. Fast random-access and high bandwidth
Memory Size = 512Mbit
Interface Type = CFI, Parallel
Package Type = TSOP
Pin Count = 56
Organisation = 32M x 16 bit
Mounting Type = Surface Mount
Cell Type = NOR
Minimum Operating Supply Voltage = 2.7 V
Maximum Operating Supply Voltage = 3.6 V
Length = 18.5mm

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Rochester Electronics Win Source Electronics RS Components, Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S29GL512S11TFI010 S29GL512S11TFI010 813154-S29GL512S11TFI010 1255887P
Product Name Integrated Circuits (ICs) - Memory Memory - Flash - S29GL512S11TFI010
Memory Category Flash; Non-Volatile Flash Flash; Non-Volatile Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits
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