Cypress Semiconductor Corp. Memory S29GL01GP12FFI010

Description
FLASH - NOR Memory IC 1Gbit Parallel 120 ns 64-FBGA (13x11)
Datasheet
Description
FLASH - NOR Memory IC 1Gbit Parallel 120 ns 64-FBGA (13x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL01GP12FFI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 120 ns 64-FBGA (13x11)

FLASH - NOR Memory IC 1Gbit Parallel 120 ns 64-FBGA (13x11)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S29GL01GP12FFI010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S29GL01GP12FFI010
Integrated Circuits (ICs) - Memory - Memory S29GL01GP12FFI010
IC FLASH 1GBIT PARALLEL 64FBGA

IC FLASH 1GBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S29GL01GP12FFI010 S29GL01GP12FFI010
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 120 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 2385263 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - S25FL128SAGMFBG00 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details