Cypress Semiconductor Corp. Memory - RAM - FM24V10-G FM24V10-G

Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 001199-FM24V10-G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (128K x 8) Access Time: 130ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 8-SOIC Supply Voltage - Operating: 2 V to 3.6 V Memory Format: FRAM Max Frequency: 3.4MHz Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Company
Product
Description
Supplier Links
Memory - RAM - FM24V10-G - 001199-FM24V10-G - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM24V10-G
001199-FM24V10-G
Memory - RAM - FM24V10-G 001199-FM24V10-G
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 001199-FM24V10-G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (128K x 8) Access Time: 130ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 8-SOIC Supply Voltage - Operating: 2 V to 3.6 V Memory Format: FRAM Max Frequency: 3.4MHz Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001199-FM24V10-G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (128K x 8)
Access Time: 130ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-SOIC
Supply Voltage - Operating: 2 V to 3.6 V
Memory Format: FRAM
Max Frequency: 3.4MHz
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - FM24V10-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
FM24V10-G
Integrated Circuits (ICs) - Memory - Memory FM24V10-G
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC

IC FRAM 1MBIT I2C 3.4MHZ 8SOIC

Supplier's Site
Memory - FM24V10-G - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) IC 3.4 MHz 130 ns 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) IC 3.4 MHz 130 ns 8-SOIC

Supplier's Site Datasheet
 - 1254215 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 1Mbit Organisation = 128K x 8 bit Interface Type = Serial-2 Wire, Serial-I2C Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Width = 3.98mm Maximum Operating Supply Voltage = 3.6 V

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 1Mbit
Organisation = 128K x 8 bit
Interface Type = Serial-2 Wire, Serial-I2C
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Width = 3.98mm
Maximum Operating Supply Voltage = 3.6 V

Supplier's Site
 - 1254215P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 1Mbit Organisation = 128K x 8 bit Interface Type = Serial-2 Wire, Serial-I2C Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Width = 3.98mm Maximum Operating Supply Voltage = 3.6 V Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 1Mbit
Organisation = 128K x 8 bit
Interface Type = Serial-2 Wire, Serial-I2C
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Width = 3.98mm
Maximum Operating Supply Voltage = 3.6 V
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Nova Technology(HK) Co.,Ltd RS Components, Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 001199-FM24V10-G FM24V10-G FM24V10-G 1254215
Product Name Memory - RAM - FM24V10-G Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category FRAM Non-Volatile NVRAM; FRAM
Access Time 130 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOIC; 8-SOIC SOIC; 8-SOIC (0.154", 3.90mm Width) SOIC
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