Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory CY7C1354A200BC

Description
IC SRAM 9MBIT PARALLEL 119PBGA
Datasheet
Description
IC SRAM 9MBIT PARALLEL 119PBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - CY7C1354A200BC - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1354A200BC
Integrated Circuits (ICs) - Memory - Memory CY7C1354A200BC
IC SRAM 9MBIT PARALLEL 119PBGA

IC SRAM 9MBIT PARALLEL 119PBGA

Supplier's Site
Memory - CY7C1354A200BC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CY7C1354A200BC CY7C1354A200BC
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 3.2 ns
Density 9000 kbits 9000 kbits
Package Type 200 MHz BGA; 119-BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 520366231296 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - NM27C020T200 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers