Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory CY7C1311CV18-200BZC

Description
QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CY7C1311CV18-200BZC - Rochester Electronics
Newburyport, MA, United States
QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165

QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CY7C1311CV18-200BZC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1311CV18-200BZC
Integrated Circuits (ICs) - Memory - Memory CY7C1311CV18-200BZC
IC SRAM 18MBIT PARALLEL 165FBGA

IC SRAM 18MBIT PARALLEL 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CY7C1311CV18-200BZC CY7C1311CV18-200BZC
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip
Logic Family CMOS
Package Type BGA; BGA165 BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details
Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 736-DP8421AV-20 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Package Type LCC
View Details
4 suppliers
SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details