Cypress Semiconductor Corp. Memory - SRAM - CY14B101LA-BA45XI CY14B101LA-BA45XI

Description
Non-Volatile SRAM, 128KX8, 45ns, CMOS, PBGA48
Request a Quote Datasheet
Description
Non-Volatile SRAM, 128KX8, 45ns, CMOS, PBGA48
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CY14B101LA-BA45XI - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM, 128KX8, 45ns, CMOS, PBGA48

Non-Volatile SRAM, 128KX8, 45ns, CMOS, PBGA48

Supplier's Site Datasheet
Memory - SRAM - CY14B101LA-BA45XI - 1163924-CY14B101LA-BA45XI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - CY14B101LA-BA45XI
1163924-CY14B101LA-BA45XI
Memory - SRAM - CY14B101LA-BA45XI 1163924-CY14B101LA-BA45XI
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1163924-CY14B101LA-B A45XI Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 48-TFBGA Mounting: SMD Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 45ns Family Name: CY14B101LA Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Manufacturer Homepage: www.cypress.com Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 48-FBGA (6x10) Alternative Parts (Cross-Reference): DS1245YP-70; DS1345WP-100IND; DS1345YP-70; Introduction Date: January 19, 2009 ECCN: EAR99 Country of Origin: Philippines, Taiwan, Thailand Estimated EOL Date: 2023 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 1163924-CY14B101LA-BA45XI
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 48-TFBGA
Mounting: SMD
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 2.7 V ~ 3.6 V
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 45ns
Family Name: CY14B101LA
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.cypress.com
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Manufacturer Package: 48-FBGA (6x10)
Alternative Parts (Cross-Reference): DS1245YP-70; DS1345WP-100IND; DS1345YP-70;
Introduction Date: January 19, 2009
ECCN: EAR99
Country of Origin: Philippines, Taiwan, Thailand
Estimated EOL Date: 2023
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CY14B101LA-BA45XI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY14B101LA-BA45XI
Integrated Circuits (ICs) - Memory - Memory CY14B101LA-BA45XI
IC NVSRAM 1MBIT PARALLEL 48FBGA

IC NVSRAM 1MBIT PARALLEL 48FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CY14B101LA-BA45XI 1163924-CY14B101LA-BA45XI CY14B101LA-BA45XI
Product Name Memory - SRAM - CY14B101LA-BA45XI Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Non-Volatile Non-Volatile; SRAM Chip
Logic Family CMOS
Package Type BGA; PG-TFBGA-48
Access Time 45 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 71016S15Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details