Custom Silicon Solutions, Inc. IP Products VPP Generator

Description
This support circuit provides the high positive voltage required to program the EEPROM memory cells. It generates approximately +20V with a multi-stage charge pump. It includes a high frequency oscillator and voltage regulator. This circuit is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following specification or contact CSS.
Datasheet
Description
This support circuit provides the high positive voltage required to program the EEPROM memory cells. It generates approximately +20V with a multi-stage charge pump. It includes a high frequency oscillator and voltage regulator. This circuit is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following specification or contact CSS.
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IP Products VPP Generator
This support circuit provides the high positive voltage required to program the EEPROM memory cells. It generates approximately +20V with a multi-stage charge pump. It includes a high frequency oscillator and voltage regulator. This circuit is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following specification or contact CSS.

This support circuit provides the high positive voltage required to program the EEPROM memory cells. It generates approximately +20V with a multi-stage charge pump. It includes a high frequency oscillator and voltage regulator. This circuit is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following specification or contact CSS.

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Technical Specifications

  Custom Silicon Solutions, Inc.
Product Category Memory Chips
Product Number VPP Generator
Product Name IP Products
Memory Category EEPROM
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