CSA Group Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods IEC 62047-16:2015

Description
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
Description
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Suppliers

Company
Product
Description
Supplier Links
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods - IEC 62047-16:2015 - CSA Group
Toronto, Ontario, Canada
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods IEC 62047-16:2015
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Supplier's Site

Technical Specifications

  CSA Group
Product Category Standards and Technical Documents
Product Number IEC 62047-16:2015
Product Name Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
Unlock Full Specs
to access all available technical data

Similar Products