Wolfspeed TRANSISTORS - Transistors - FETs, MOSFETs - RF - PTFA220081M-V4 PTFA220081M-V4

The PTFA220081M is an unmatched 8-watt LDMOS FET designed for RF power amplifier applications from 700 MHz to 2200 MHz. It is packaged in a PG-SON-10 surface-mount package measuring 4.00 mm x 4.00 mm x 1.42 mm. The device operates with a drain-source voltage up to 65 V and a gate-source voltage range of -0.5 V to +12 V, with a maximum junction temperature of 175 °C. It delivers 40 dBm output power at 940 MHz and 2140 MHz with 59% and 50% drain efficiency respectively, and gain of 20 dB and 15 dB at those frequencies. The transistor includes integrated ESD protection, exhibits thermal stability, and meets RoHS compliance. It is rated for a moisture sensitivity level of 3 and ships in tape and reel packaging with 500 pieces per reel.