Wolfspeed High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz PTAC210802FC-V1

Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetrical design Main: P1dB = 19 W Typ Peak: P1dB = 60 W Typ Broadband internal matching Wide video bandwidth Broadband internal matching Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) Output power @ P3dB = 75 W Efficiency = 48% Gain Gain @ P3dB = 14 dB ACPR = –34 dBc @ 5 MHz Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture) Output power @ P1dB = 45 W Output power @ P3dB = 80 W Efficiency = 48% Gain@ P3dB = 14 dB Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114) Pb-free and RoHS compliant
Datasheet
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetrical design Main: P1dB = 19 W Typ Peak: P1dB = 60 W Typ Broadband internal matching Wide video bandwidth Broadband internal matching Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) Output power @ P3dB = 75 W Efficiency = 48% Gain Gain @ P3dB = 14 dB ACPR = –34 dBc @ 5 MHz Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture) Output power @ P1dB = 45 W Output power @ P3dB = 80 W Efficiency = 48% Gain@ P3dB = 14 dB Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114) Pb-free and RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz - PTAC210802FC-V1 - Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz
PTAC210802FC-V1
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz PTAC210802FC-V1
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetrical design Main: P1dB = 19 W Typ Peak: P1dB = 60 W Typ Broadband internal matching Wide video bandwidth Broadband internal matching Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) Output power @ P3dB = 75 W Efficiency = 48% Gain Gain @ P3dB = 14 dB ACPR = –34 dBc @ 5 MHz Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture) Output power @ P1dB = 45 W Output power @ P3dB = 80 W Efficiency = 48% Gain@ P3dB = 14 dB Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114) Pb-free and RoHS compliant

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Asymmetrical design
    • Main: P1dB = 19 W Typ
    • Peak: P1dB = 60 W Typ
  • Broadband internal matching
  • Wide video bandwidth
  • Broadband internal matching
  • Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture)
    • Output power @ P3dB = 75 W
    • Efficiency = 48%
    • Gain Gain @ P3dB = 14 dB
    • ACPR = –34 dBc @ 5 MHz
  • Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture)
    • Output power @ P1dB = 45 W
    • Output power @ P3dB = 80 W
    • Efficiency = 48%
    • Gain@ P3dB = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114)
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTAC210802FC-V1
Product Name High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz
Transistor Technology / Material High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz
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