The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
Asymmetric Doherty design
Main: P1dB = 70 W Typ
Peak: P1dB = 120 W Typ
Broadband internal matching
Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty configuration)
Average output power = 44.6 dBm
Linear Gain = 15.5 dB
Efficiency = 46%
IMD = –25 dBc
Increased negative gate-source voltage range for improved performance in Doherty amplifiers
Integrated ESD protection
Capable of handling 3:1 VSWR @ 30 V,50 W (average) output power (one-carrier WCDMA signal, 10 dB PAR, Doherty test fixture)
Pb-free and RoHS-compliant
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
- Asymmetric Doherty design
- Main: P1dB = 70 W Typ
- Peak: P1dB = 120 W Typ
- Broadband internal matching
- Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty configuration)
- Average output power = 44.6 dBm
- Linear Gain = 15.5 dB
- Efficiency = 46%
- IMD = –25 dBc
- Increased negative gate-source voltage range for improved performance in Doherty amplifiers
- Integrated ESD protection
- Capable of handling 3:1 VSWR @ 30 V,50 W (average) output power (one-carrier WCDMA signal, 10 dB PAR, Doherty test fixture)
- Pb-free and RoHS-compliant
