Wolfspeed High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz GTVA262701FA-V2

Description
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V Output power at P3dB = 270 W Efficiency = 66% Gain = 18.1 dB Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power Pb-free and RoHS-compliant
  • High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz - GTVA262701FA-V2 - Wolfspeed
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Datasheet
Description
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V Output power at P3dB = 270 W Efficiency = 66% Gain = 18.1 dB Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power Pb-free and RoHS-compliant
Datasheet

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High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz - GTVA262701FA-V2 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
GTVA262701FA-V2
High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz GTVA262701FA-V2
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V Output power at P3dB = 270 W Efficiency = 66% Gain = 18.1 dB Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power Pb-free and RoHS-compliant

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V
    • Output power at P3dB = 270 W
    • Efficiency = 66%
    • Gain = 18.1 dB
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power
  • Pb-free and RoHS-compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTVA262701FA-V2
Product Name High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Transistor Technology / Material GaN
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