The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Features
GaN on SiC HEMT technology
Input matched
Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V
Output power at P3dB = 270 W
Efficiency = 66%
Gain = 18.1 dB
Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power
Pb-free and RoHS-compliant
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 270 W
- Efficiency = 66%
- Gain = 18.1 dB
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power
- Pb-free and RoHS-compliant
