Wolfspeed High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz GTVA123501FA-V1

Description
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange. Features GaN on SiC HEMT technology Broadband internal input matching Pb-free and RoHS compliant
  • High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz - GTVA123501FA-V1 - Wolfspeed
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Datasheet
Description
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange. Features GaN on SiC HEMT technology Broadband internal input matching Pb-free and RoHS compliant
Datasheet

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High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz - GTVA123501FA-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz
GTVA123501FA-V1
High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz GTVA123501FA-V1
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange. Features GaN on SiC HEMT technology Broadband internal input matching Pb-free and RoHS compliant

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTVA123501FA-V1
Product Name High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz
Transistor Technology / Material GaN
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