Wolfspeed High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz GTRA384802FC-V1

Description
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Datasheet
Description
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Datasheet

Suppliers

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High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz - GTRA384802FC-V1 - Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz
GTRA384802FC-V1
High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz GTRA384802FC-V1
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA384802FC-V1
Product Name High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz
Transistor Technology / Material GaN
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