Wolfspeed High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz GTRA374902FC-V1

Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Datasheet
Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Datasheet

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High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz - GTRA374902FC-V1 - Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz
GTRA374902FC-V1
High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz GTRA374902FC-V1
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA374902FC-V1
Product Name High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz
Transistor Technology / Material GaN
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