Wolfspeed High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz GTRA362802FC-V1

Description
The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Asymmetrical Doherty design Main: P3dB = 120 W Typ Peak: P3dB = 180 W Typ Typical Pulsed CW performance, 3400 – 3600 MHz, 48 V, combined outputs, 10 μs pulse width, 10% duty cycle Output power at P3dB = 280 W Drain Efficiency = 60% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 44 W (CW) output power Low thermal resistance Pb-free and RoHS compliant
  • High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz - GTRA362802FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Asymmetrical Doherty design Main: P3dB = 120 W Typ Peak: P3dB = 180 W Typ Typical Pulsed CW performance, 3400 – 3600 MHz, 48 V, combined outputs, 10 μs pulse width, 10% duty cycle Output power at P3dB = 280 W Drain Efficiency = 60% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 44 W (CW) output power Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz - GTRA362802FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz
GTRA362802FC-V1
High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz GTRA362802FC-V1
The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Asymmetrical Doherty design Main: P3dB = 120 W Typ Peak: P3dB = 180 W Typ Typical Pulsed CW performance, 3400 – 3600 MHz, 48 V, combined outputs, 10 μs pulse width, 10% duty cycle Output power at P3dB = 280 W Drain Efficiency = 60% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 44 W (CW) output power Low thermal resistance Pb-free and RoHS compliant

The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Asymmetrical Doherty design
    • Main: P3dB = 120 W Typ
    • Peak: P3dB = 180 W Typ
  • Typical Pulsed CW performance, 3400 – 3600 MHz, 48 V, combined outputs, 10 μs pulse width, 10% duty cycle
    • Output power at P3dB = 280 W
    • Drain Efficiency = 60%
    • Gain = 15 dB
  • Capable of handling 10:1 VSWR @48 V, 44 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA362802FC-V1
Product Name High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz
Transistor Technology / Material GaN
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