Wolfspeed High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz GTRA362002FC-V1

Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs Output power at P3dB = 200 W Efficiency = 60% Gain = 12.5 dB Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power RoHS-compliant
  • High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz - GTRA362002FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs Output power at P3dB = 200 W Efficiency = 60% Gain = 12.5 dB Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power RoHS-compliant
Datasheet

Suppliers

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High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz - GTRA362002FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
GTRA362002FC-V1
High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz GTRA362002FC-V1
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs Output power at P3dB = 200 W Efficiency = 60% Gain = 12.5 dB Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power RoHS-compliant

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs
    • Output power at P3dB = 200 W
    • Efficiency = 60%
    • Gain = 12.5 dB
  • Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power
  • RoHS-compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA362002FC-V1
Product Name High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
Transistor Technology / Material GaN
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