The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
GaN on SiC HEMT technology
Input matched
Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs
Output power at P3dB = 200 W
Efficiency = 60%
Gain = 12.5 dB
Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power
RoHS-compliant
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
- GaN on SiC HEMT technology
- Input matched
- Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs
- Output power at P3dB = 200 W
- Efficiency = 60%
- Gain = 12.5 dB
- Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power
- RoHS-compliant
