Wolfspeed High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz GTRA263902FC-V2

Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs Output power at P3dB = 370 W Efficiency = 70% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power Low thermal resistance Pb-free and RoHS compliant
  • High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz - GTRA263902FC-V2 - Wolfspeed
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Datasheet
Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs Output power at P3dB = 370 W Efficiency = 70% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power Low thermal resistance Pb-free and RoHS compliant
Datasheet

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High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz - GTRA263902FC-V2 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz
GTRA263902FC-V2
High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz GTRA263902FC-V2
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs Output power at P3dB = 370 W Efficiency = 70% Gain = 15 dB Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power Low thermal resistance Pb-free and RoHS compliant

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs
    • Output power at P3dB = 370 W
    • Efficiency = 70%
    • Gain = 15 dB
  • Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA263902FC-V2
Product Name High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz
Transistor Technology / Material GaN
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