Wolfspeed High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz GTRA262802FC-V2

Description
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance, 2605 MHz, 48 V, combined outputs, 16 μs pulse width Output power at P3dB = 250 W Efficiency = 62% Gain = 14.4 dB Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant
  • High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz - GTRA262802FC-V2 - Wolfspeed
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Datasheet
Description
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance, 2605 MHz, 48 V, combined outputs, 16 μs pulse width Output power at P3dB = 250 W Efficiency = 62% Gain = 14.4 dB Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant
Datasheet

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High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz - GTRA262802FC-V2 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
GTRA262802FC-V2
High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz GTRA262802FC-V2
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance, 2605 MHz, 48 V, combined outputs, 16 μs pulse width Output power at P3dB = 250 W Efficiency = 62% Gain = 14.4 dB Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant

The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance, 2605 MHz, 48 V, combined outputs, 16 μs pulse width
    • Output power at P3dB = 250 W
    • Efficiency = 62%
    • Gain = 14.4 dB
  • Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA262802FC-V2
Product Name High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
Transistor Technology / Material GaN
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