The E4MS045075K1 is an automotive-grade silicon carbide power MOSFET in a TO-247-4 LP package, rated for a drain-source voltage of 750 V and continuous drain current of 33 A at 100 °C case temperature. It features a maximum on-resistance of 66.2 mΩ at 175 °C junction temperature and 54.9 mΩ at 25 °C with 15 V gate drive. The device is AEC-Q101 qualified and RoHS compliant, with a thermal resistance from junction to case of 0.99 °C/W. It supports gate drive voltages of +15 V to +18 V for turn-on and -4 V to 0 V for turn-off, and exhibits a capacitance ratio of Ciss/Crss of 430.
45M, 750V, TO-247-4 LP, AUTOMOTI
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1697-E4MS045075K1-ND |
| Product Name | Single FETs, MOSFETs |
