E4MS015075K1 is an automotive-grade silicon carbide power MOSFET in a TO-247-4 LP package, rated for 750 V drain-source voltage and continuous drain current of 96 A at 100 °C case temperature. It features a typical on-resistance of 22.1 mΩ at 175 °C junction temperature and a thermal resistance from junction to case of 0.29 °C/W. The device is qualified to AEC-Q101 and complies with RoHS. Recommended gate drive voltages are +15 V to +18 V for turn-on and -4 V to 0 V for turn-off. Switching losses and EMI are reduced, enabling high-efficiency operation in applications such as onboard chargers and DC/DC converters.
15M, 750V, TO-247-4 LP, AUTOMOTI
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1697-E4MS015075K1-ND |
| Product Name | Single FETs, MOSFETs |