The E4MS008075K1 is an automotive-grade silicon carbide power MOSFET designed for high-efficiency switching applications such as onboard chargers and DC/DC converters. It is packaged in a TO-247-4 LP case and rated for a maximum drain-source voltage of 750 V, with a continuous drain current of 175 A at 100 °C case temperature. The device exhibits a typical on-state resistance of 9.6 mΩ at 15 V gate voltage and 175 °C junction temperature, and supports a gate drive voltage range of +15 V to +18 V for turn-on and -4 V to 0 V for turn-off. It meets AEC-Q101 automotive qualification standards and is RoHS compliant. Thermal resistance from junction to case is 0.16-0.21 °C/W.
8M, 750V, TO-247-4 LP, AUTOMOTIV
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1697-E4MS008075K1-ND |
| Product Name | Single FETs, MOSFETs |