The E4M0045075U2 is a 750V, 45mΩ N-channel enhancement mode Silicon Carbide MOSFET in a Top Side Cooled (TSC) package, designed for automotive applications such as motor control and DC/DC conversion. It features a separate driver source pin, high creepage design, and operates with a junction temperature range of -55°C to +175°C. The device has a maximum continuous drain current of 32A at 100°C case temperature, a power dissipation of 177W at 25°C case temperature, and a thermal resistance from junction to case of 0.65°C/W. It is AEC-Q101 qualified and RoHS compliant.
SiC, MOSFET, 45 mOhm,750V, TSC (U2) , Automotive, Gen4
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | E4M0045075U2-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0450 ohms |
