The E4M0045075K1 is an automotive-qualified N-channel enhancement mode silicon carbide power MOSFET designed for high-efficiency switching applications such as motor control and EV battery charging. It is packaged in a TO-247-4L case with a separate driver source pin and measures 21.14 mm in length, 16.13 mm in width, and 5.21 mm in height. The device has a drain-source voltage rating of 750 V, a continuous drain current of 40 A at 25°C, and a maximum power dissipation of 139 W. Its drain-source on-state resistance is 60 mΩ at 15 V gate voltage and 25°C, dropping to 79 mΩ at 175°C. The gate-source voltage limit is -8 V to +19 V. It is AEC-Q101 qualified, RoHS compliant, and features a low reverse recovery charge of 217 nC and a thermal resistance from junction to case of 1.08 °C/W.
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The E4M0045075K1 is an automotive-qualified N-channel enhancement mode silicon carbide power MOSFET designed for high-efficiency switching applications such as motor control and EV battery charging. It is packaged in a TO-247-4L case with a separate driver source pin and measures 21.14 mm in length, 16.13 mm in width, and 5.21 mm in height. The device has a drain-source voltage rating of 750 V, a continuous drain current of 40 A at 25°C, and a maximum power dissipation of 139 W. Its drain-source on-state resistance is 60 mΩ at 15 V gate voltage and 25°C, dropping to 79 mΩ at 175°C. The gate-source voltage limit is -8 V to +19 V. It is AEC-Q101 qualified, RoHS compliant, and features a low reverse recovery charge of 217 nC and a thermal resistance from junction to case of 1.08 °C/W.
