Wolfspeed Silicon Carbide MOSFETs E4M0015075U2-TR

Description
SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4
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Description
SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4
Request a Quote
Datasheet
Datasheet Summary
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E4M0015075U2-TR is an automotive-qualified 750V N-channel enhancement mode silicon carbide MOSFET in a top-side cooled (TSC) U2 package, designed for high-efficiency switching applications such as EV battery chargers and DC/DC converters. It has a maximum drain-source on-state resistance of 21 mΩ at 150°C and 26 mΩ at 175°C, with a continuous drain current of 101 A at 100°C case temperature and 468 W power dissipation at 25°C case temperature. The device features a thermal resistance from junction to case of 0.25-0.32 °C/W and meets AEC-Q101 qualification standards with PPAP capability. The package includes a separate driver source pin for reduced gate ringing, and the unit is RoHS compliant and halogen free.

Datasheet Summary
Powered by GS/AI

E4M0015075U2-TR is an automotive-qualified 750V N-channel enhancement mode silicon carbide MOSFET in a top-side cooled (TSC) U2 package, designed for high-efficiency switching applications such as EV battery chargers and DC/DC converters. It has a maximum drain-source on-state resistance of 21 mΩ at 150°C and 26 mΩ at 175°C, with a continuous drain current of 101 A at 100°C case temperature and 468 W power dissipation at 25°C case temperature. The device features a thermal resistance from junction to case of 0.25-0.32 °C/W and meets AEC-Q101 qualification standards with PPAP capability. The package includes a separate driver source pin for reduced gate ringing, and the unit is RoHS compliant and halogen free.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E4M0015075U2-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E4M0015075U2-TR
Silicon Carbide MOSFETs E4M0015075U2-TR
SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4

SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number E4M0015075U2-TR
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0150 ohms
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