Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
750V SiC MOSFET technology
Optimized package with separate driver source pin
4.7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Automotive qualified (AEC-Q101) and PPAP capable
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
Motor Control
EV On Board Battery Chargers (OBC)
Automotive DC/DC Converters for EV/HEV
Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode
- 750V SiC MOSFET technology
- Optimized package with separate driver source pin
- 4.7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
- Automotive qualified (AEC-Q101) and PPAP capable
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Applications
- Motor Control
- EV On Board Battery Chargers (OBC)
- Automotive DC/DC Converters for EV/HEV
