Wolfspeed Silicon Carbide MOSFETs E3M0160120U2-TR

The E3M0160120U2 is a 1200V, 160mΩ N-channel enhancement mode silicon carbide power MOSFET in a Top Side Cooled (TSC) U2 package, measuring 11.75mm x 14.12mm. It supports a continuous drain current of 13A at 100°C junction temperature and dissipates up to 104W at 25°C case temperature. The device features a thermal resistance from junction to case of 1.11-1.44°C/W, low gate charge of 27nC, and a fast intrinsic diode with reverse recovery charge of 183-250nC. It operates from -55°C to +175°C junction temperature and is qualified to AEC-Q101 standards with PPAP capability. The package includes a separate driver source pin for minimized gate ringing and high creepage design. RoHS compliant and halogen free.