Wolfspeed E-Series Automotive Silicon Carbide MOSFET E3M0120090D

Description
Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW Bi-Directional On-Board Charger reference design, which can be found here. Features Automotive Qualified (AEC-Q101) and PPAP Capable Minimum of 900V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice or PLECS models or try our SpeedFit design simulator.
Datasheet
Description
Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW Bi-Directional On-Board Charger reference design, which can be found here. Features Automotive Qualified (AEC-Q101) and PPAP Capable Minimum of 900V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice or PLECS models or try our SpeedFit design simulator.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
E-Series Automotive Silicon Carbide MOSFET - E3M0120090D - Wolfspeed
Durham, NC, United States
E-Series Automotive Silicon Carbide MOSFET
E3M0120090D
E-Series Automotive Silicon Carbide MOSFET E3M0120090D
Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW Bi-Directional On-Board Charger reference design, which can be found here. Features Automotive Qualified (AEC-Q101) and PPAP Capable Minimum of 900V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice or PLECS models or try our SpeedFit design simulator.

Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW Bi-Directional On-Board Charger reference design, which can be found here.

Features

  • Automotive Qualified (AEC-Q101) and PPAP Capable
  • Minimum of 900V Vbr across entire operating temperature range
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Download our LTspice or PLECS models or try our SpeedFit design simulator.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 900V 120mOhms G3 SiC MOSFET

MOSFET 900V 120mOhms G3 SiC MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0120090D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0120090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0120090D
SICFET N-CH 900V 23A TO247-3

SICFET N-CH 900V 23A TO247-3

Supplier's Site
Mosfet, N-Ch, 900V, 23A, 150Deg C, 97W; Transistor Polarity Wolfspeed - 71AC0355 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 23A, 150Deg C, 97W; Transistor Polarity Wolfspeed
71AC0355
Mosfet, N-Ch, 900V, 23A, 150Deg C, 97W; Transistor Polarity Wolfspeed 71AC0355
MOSFET, N-CH, 900V, 23A, 150DEG C, 97W; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 900V, 23A, 150DEG C, 97W; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number E3M0120090D E3M0120090D E3M0120090D 71AC0355
Product Name E-Series Automotive Silicon Carbide MOSFET MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 900V, 23A, 150Deg C, 97W; Transistor Polarity Wolfspeed
Transistor Technology / Material E-Series Automotive Silicon Carbide MOSFET
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