Wolfspeed Single FETs, MOSFETs E3M0032120K

Description
SIC, MOSFET, 32M, 1200V, TO-247-
  • Single FETs, MOSFETs - 1697-E3M0032120K-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - E3M0032120K - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0032120K - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
SIC, MOSFET, 32M, 1200V, TO-247-
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-E3M0032120K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0032120K-ND
Single FETs, MOSFETs 1697-E3M0032120K-ND
SIC, MOSFET, 32M, 1200V, TO-247-

SIC, MOSFET, 32M, 1200V, TO-247-

Buy Now Datasheet
Silicon Carbide MOSFETs - E3M0032120K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0032120K
Silicon Carbide MOSFETs E3M0032120K
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Motor Control EV battery chargers High voltage DC/DC converters

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Motor Control
  • EV battery chargers
  • High voltage DC/DC converters
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - E3M0032120K - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
E3M0032120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs E3M0032120K
SIC, MOSFET, 32M, 1200V, TO-247

SIC, MOSFET, 32M, 1200V, TO-247

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-E3M0032120K-ND E3M0032120K E3M0032120K
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4
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