Wolfspeed Silicon Carbide MOSFETs E3M0032120J2-TR

Description
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Motor Control High Voltage DC/DC converters EV Battery Chargers
  • Silicon Carbide MOSFETs - E3M0032120J2-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-E3M0032120J2-TRCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-E3M0032120J2-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-E3M0032120J2-TRDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Motor Control High Voltage DC/DC converters EV Battery Chargers
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - E3M0032120J2-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
E3M0032120J2-TR
Silicon Carbide MOSFETs E3M0032120J2-TR
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive qualified (AEC-Q101) and PPAP capable Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Motor Control High Voltage DC/DC converters EV Battery Chargers

Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 4.7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive qualified (AEC-Q101) and PPAP capable

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Motor Control
  • High Voltage DC/DC converters
  • EV Battery Chargers
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-E3M0032120J2-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0032120J2-TRCT-ND
Single FETs, MOSFETs 1697-E3M0032120J2-TRCT-ND
32m, 1200V SiC FET, TO-263-7 XL

32m, 1200V SiC FET, TO-263-7 XL

Buy Now Datasheet
Single FETs, MOSFETs - 1697-E3M0032120J2-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0032120J2-TR-ND
Single FETs, MOSFETs 1697-E3M0032120J2-TR-ND
32m, 1200V SiC FET, TO-263-7 XL

32m, 1200V SiC FET, TO-263-7 XL

Buy Now Datasheet
Single FETs, MOSFETs - 1697-E3M0032120J2-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-E3M0032120J2-TRDKR-ND
Single FETs, MOSFETs 1697-E3M0032120J2-TRDKR-ND
32m, 1200V SiC FET, TO-263-7 XL

32m, 1200V SiC FET, TO-263-7 XL

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number E3M0032120J2-TR 1697-E3M0032120J2-TRCT-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.0320 ohms
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