Wolfspeed Silicon Carbide Test/Evaluation Products CRD-60DD12N

CRD-60DD12N is a 60kW interleaved boost converter reference design based on Wolfspeed’s C3MTM 1200V, 75 mOhm SiC MOSFET which comes in a TO-247-4 package with a Kelvin source availability. The availability of Kelvin source reduces the inductance of gate and Kelvin source path which in turn reduces the overall switching losses. The CRD-60DD12N 60 kW interleaved boost converter utilizes Wolfspeed’s newly-developed CGD15SG00D2 isolated gate driver board which is tailored to the drive requirements of Wolfspeed’s generation 3 C3M SiC MOSFETs. This reference design consists of four interleaved 15kW boost converters. Wolfspeed’s C4D10120D SiC Schottky diodes, which possess low voltage drop and zero reverse recovery features, have also been used. The demo board can accept 470VDC-800VDC as an input and provide 850 VDC at the output with a peak efficiency of 99.5% and a power density of 127W/in3. The PCB has been divided into two sections, one is the boost control board and the other is the boost power board. The boost power board mainly consist of power switching devices, passive elements (including boost inductor and capacitor) and voltage/current sensing circuitry. There are three pin header connectors (CON217, CON218, CON219) that plug boost control board into the boost power board. The efficiency of the CRD-60DD12N, 60kW interleaved boost converter was measured under various load conditions (10 kW – 60 kW) while keeping the input voltage constant at 600Vdc. The maximum efficiency achieved by this reference design was 99.5%. The demo board targets high voltage and high power density applications such as Solar Power Generation. Documentation includes a bill of materials (BOM), schematic, board layout and the application note Download Application Note Download Presentation Design files only. No hardware available.