Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-1200V-0075A

Description
This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies. Features C3M SiC MOSFET technlogy High Blocking Voltage with Low RDS(on) High speed switching with low capacitance Easy to parallel and simple to drive Fast intrinsic diode with low reserve recovery (Qrr)
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - CPM3-1200V-0075A - Wolfspeed
    Wolfspeed
Description
This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies. Features C3M SiC MOSFET technlogy High Blocking Voltage with Low RDS(on) High speed switching with low capacitance Easy to parallel and simple to drive Fast intrinsic diode with low reserve recovery (Qrr)

Suppliers

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Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - CPM3-1200V-0075A - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
CPM3-1200V-0075A
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-1200V-0075A
This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies. Features C3M SiC MOSFET technlogy High Blocking Voltage with Low RDS(on) High speed switching with low capacitance Easy to parallel and simple to drive Fast intrinsic diode with low reserve recovery (Qrr)

This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.

Features

  • C3M SiC MOSFET technlogy
  • High Blocking Voltage with Low RDS(on)
  • High speed switching with low capacitance
  • Easy to parallel and simple to drive
  • Fast intrinsic diode with low reserve recovery (Qrr)
Supplier's Site

Technical Specifications

  Wolfspeed
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM3-1200V-0075A
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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