Wolfspeed Silicon Carbide Power MOSFET Die C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-0900-0030A

Wolfspeed introduces the availability its latest C3MTM SiC MOSFET technology in die form. The new device is rated 30mΩ Rds(on) and capable of 900V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. C3MTM MOSFET die can be configured in parallel to achieve higher current handling capability or can be connected in series to achieve higher blocking capability. Unlike silicon MOSFETs, Wolfspeed C3MTM SiC MOSFETs include a fast and reliable intrinsic diode with low reverse recovery (Qrr) – eliminating the need for external anti-parallel diodes. Unlike silicon IGBTs, they include avalanche capability and enable operation at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall size, weight, and cost of the system. Features Minimum of 900V Vbr across entire operating temperature range (Reduce or eliminate derating) High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive