Wolfspeed Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode CPM2-1700-0080B

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable of supporting new 1500V renewable-energy requirements, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Download our LTspice model or buy now from Semidice. Features Minimum of 1700V of VBR across the entire operating temperature range High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - CPM2-1700-0080B - Wolfspeed
    Wolfspeed
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable of supporting new 1500V renewable-energy requirements, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Download our LTspice model or buy now from Semidice. Features Minimum of 1700V of VBR across the entire operating temperature range High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Suppliers

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Description
Supplier Links
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - CPM2-1700-0080B - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
CPM2-1700-0080B
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode CPM2-1700-0080B
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable of supporting new 1500V renewable-energy requirements, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Download our LTspice model or buy now from Semidice. Features Minimum of 1700V of VBR across the entire operating temperature range High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable of supporting new 1500V renewable-energy requirements, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Download our LTspice model or buy now from Semidice.

Features

  • Minimum of 1700V of VBR across the entire operating temperature range
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site

Technical Specifications

  Wolfspeed
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM2-1700-0080B
Product Name Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
Transistor Technology / Material Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
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