Wolfspeed Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode CPM2-1700-0045B

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr)
  • Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - CPM2-1700-0045B - Wolfspeed
    Wolfspeed
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr)

Suppliers

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Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - CPM2-1700-0045B - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
CPM2-1700-0045B
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode CPM2-1700-0045B
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr)

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Features

  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
Supplier's Site

Technical Specifications

  Wolfspeed
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM2-1700-0045B
Product Name Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
Transistor Technology / Material Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
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