CPM2-1200-0160B -- 2ND-GENERATION Z-FET® 1200-V, 160-MΩ, SILICON-CARBIDE MOSFET BARE DIE
Wolfspeed2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare DieCPM2-1200-0160B
Description
Features
Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Easy to parallel and simple to drive
Wolfspeed
Done
Description
Features
Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Easy to parallel and simple to drive
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die
CPM2-1200-0160B
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die
CPM2-1200-0160B
Features
Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Easy to parallel and simple to drive
Features
Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Easy to parallel and simple to drive
Supplier's Site
Technical Specifications
Wolfspeed
Product Category
Metal-Oxide Semiconductor FET (MOSFET)
Product Number
CPM2-1200-0160B
Product Name
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die
Transistor Technology / Material
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die
