Wolfspeed 2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier CMPA0060002D

Description
Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint.
  • 2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier - CMPA0060002D - Wolfspeed
    Wolfspeed
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Description
Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint.
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2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier - CMPA0060002D - Wolfspeed
Wolfspeed
Durham, NC, United States
2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier
CMPA0060002D
2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier CMPA0060002D
Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint.

Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CMPA0060002D
Product Name 2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier
Transistor Technology / Material GaN
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