Wolfspeed 60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations CGHV35060MP

Description
Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain, power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.
Datasheet
Description
Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain, power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.
Datasheet

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60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations - CGHV35060MP - Wolfspeed
Durham, NC, United States
60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations
CGHV35060MP
60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations CGHV35060MP
Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain, power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.

Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain, power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGHV35060MP
Product Name 60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations
Transistor Technology / Material GaN
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