Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobili
ty transistor (HEMT) housed in a small, plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match, which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L-band or low S-band (<2.7 GHz). Additionally, the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B, F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.
Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small, plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match, which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L-band or low S-band (<2.7 GHz). Additionally, the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B, F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.
