Wolfspeed 60-W, 3100 – 3500-MHz, 28-V GaN HEMT CGH35060F2/P2

Description
Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
Datasheet
Description
Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
Datasheet

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60-W, 3100 – 3500-MHz, 28-V GaN HEMT - CGH35060F2/P2 - Wolfspeed
Durham, NC, United States
60-W, 3100 – 3500-MHz, 28-V GaN HEMT
CGH35060F2/P2
60-W, 3100 – 3500-MHz, 28-V GaN HEMT CGH35060F2/P2
Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGH35060F2/P2
Product Name 60-W, 3100 – 3500-MHz, 28-V GaN HEMT
Transistor Technology / Material GaN
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