Wolfspeed 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems CGH31240

Description
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
  • 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems - CGH31240 - Wolfspeed
    Wolfspeed
Datasheet
Description
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems - CGH31240 - Wolfspeed
Wolfspeed
Durham, NC, United States
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
CGH31240
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems CGH31240
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGH31240
Product Name 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB828
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR
2N3904TAR
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7665S2TR - 862657-AUIRF7665S2TR - Win Source Electronics
Infineon Technologies AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7665S2TR
AUIRF7665S2TR
Specs
Polarity N-Channel
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3; DIRECTFET SB
View Details
6 suppliers