Wolfspeed 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems CGH31240

Description
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
  • 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems - CGH31240 - Wolfspeed
    Wolfspeed
Datasheet
Description
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
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240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems - CGH31240 - Wolfspeed
Wolfspeed
Durham, NC, United States
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
CGH31240
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems CGH31240
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGH31240
Product Name 240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
Transistor Technology / Material GaN
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