Wolfspeed Silicon Carbide MOSFET Modules CCB016M12GM3T

Description
1200 V, 16 mOhm, Silicon Carbide, Six-Pack Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Optional Pre-Applied Thermal Interface Material Applications EV Chargers DC-DC Converters High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
  • Silicon Carbide MOSFET Modules - CCB016M12GM3T - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CCB016M12GM3T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CCB016M12GM3T - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
1200 V, 16 mOhm, Silicon Carbide, Six-Pack Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Optional Pre-Applied Thermal Interface Material Applications EV Chargers DC-DC Converters High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CCB016M12GM3T - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CCB016M12GM3T
Silicon Carbide MOSFET Modules CCB016M12GM3T
1200 V, 16 mOhm, Silicon Carbide, Six-Pack Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Optional Pre-Applied Thermal Interface Material Applications EV Chargers DC-DC Converters High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

1200 V, 16 mOhm, Silicon Carbide, Six-Pack Module

Technical Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation
  • Optional Pre-Applied Thermal Interface Material

Applications

  • EV Chargers
  • DC-DC Converters
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CCB016M12GM3T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CCB016M12GM3T-ND
FET, MOSFET Arrays 1697-CCB016M12GM3T-ND
MOSFET 6N-CH 1200V 50A MODULE

MOSFET 6N-CH 1200V 50A MODULE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CCB016M12GM3T - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CCB016M12GM3T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CCB016M12GM3T
SIC MODULE 1200V

SIC MODULE 1200V

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CCB016M12GM3T 1697-CCB016M12GM3T-ND CCB016M12GM3T
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type GM3 Module
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