1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
Low Inductance, Low Profile 62mm Footprint
High Junction Temperature (175 C) Operation
Implements Switching Optimized Third Generation SiC MOSFET Technology
Zero Reverse Recovery from Diodes
Light Weight AlSiC Baseplate
High Reliability Silicon Nitride Insulator
Applications
Railway and Traction
Solar
EV Chargers
Industrial Automation and Testing
System Benefits
Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
High Reliability Material Selection
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
- Low Inductance, Low Profile 62mm Footprint
- High Junction Temperature (175 C) Operation
- Implements Switching Optimized Third Generation SiC MOSFET Technology
- Zero Reverse Recovery from Diodes
- Light Weight AlSiC Baseplate
- High Reliability Silicon Nitride Insulator
Applications
- Railway and Traction
- Solar
- EV Chargers
- Industrial Automation and Testing
System Benefits
- Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
- Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
- High Reliability Material Selection
