MOSFET MODULE, DUAL N-CH, 1.2KV, 444A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:444A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes
MOSFET 2N-CH 1200V 444A MODULE
| Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 21AH3193 | CAS325M12HM2 |
| Product Name | Mosfet Module, Dual N-Ch, 1.2Kv, 444A; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| IDSS | 444000 milliamps |
