HALF BRIDGE MOSFET MODULE, 1200V, 100A, SILICON CARBIDE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:568W RoHS Compliant: Yes
MOSFET 2N-CH 1200V 168A MODULE
| Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 47W3950 | CAS100H12AM1 |
| Product Name | Half Bridge Mosfet Module, 1200V, 100A, Silicon Carbide; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| IDSS | 100000 milliamps |
