1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module
Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement.
Technical Features
Low Inductance, Low Profile 62mm Footprint
High Junction Temperature (175 C) Operation
Implements Switching Optimized Third Generation SiC MOSFET Technology
Light Weight AlSiC Baseplate
High Reliability Silicon Nitride Insulator
System Benefits
Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
High Reliability Material Selection
Applications
Railway and Traction
Solar
EV Chargers
Industrial Automation and Testing
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module
Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement.
Technical Features
- Low Inductance, Low Profile 62mm Footprint
- High Junction Temperature (175 C) Operation
- Implements Switching Optimized Third Generation SiC MOSFET Technology
- Light Weight AlSiC Baseplate
- High Reliability Silicon Nitride Insulator
System Benefits
- Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
- Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
- High Reliability Material Selection
Applications
- Railway and Traction
- Solar
- EV Chargers
- Industrial Automation and Testing
