Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
1700V Drain-Source Voltage
Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
1700V VDS allows use with higher bus voltages (up to 1.4kV)
Applications
Energy
Medical
Motor and Motion Control
Test and Production Equipment
Transportation
Traction Inverters
Richardson RFPD
DigiKey
Acme Chip Technology Co., Limited
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Datasheet
Description
Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
1700V Drain-Source Voltage
Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
1700V VDS allows use with higher bus voltages (up to 1.4kV)
Applications
Energy
Medical
Motor and Motion Control
Test and Production Equipment
Transportation
Traction Inverters
Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
1700V Drain-Source Voltage
Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
1700V VDS allows use with higher bus voltages (up to 1.4kV)
Applications
Energy
Medical
Motor and Motion Control
Test and Production Equipment
Transportation
Traction Inverters
Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
1700V Drain-Source Voltage
Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
1700V VDS allows use with higher bus voltages (up to 1.4kV)
