Wolfspeed FET, MOSFET Arrays CAB011A12GM3

Description
MOSFET 2N-CH 1200V 141A MODULE
  • FET, MOSFET Arrays - 1697-CAB011A12GM3-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFET Modules - CAB011A12GM3 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB011A12GM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
MOSFET 2N-CH 1200V 141A MODULE
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 1697-CAB011A12GM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB011A12GM3-ND
FET, MOSFET Arrays 1697-CAB011A12GM3-ND
MOSFET 2N-CH 1200V 141A MODULE

MOSFET 2N-CH 1200V 141A MODULE

Buy Now Datasheet
Silicon Carbide MOSFET Modules - CAB011A12GM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB011A12GM3
Silicon Carbide MOSFET Modules CAB011A12GM3
1200 V, 11 mOhm, Silicon Carbide, Half-Bridge Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminum Nitride Ceramic Substrate Optional Pre-Applied Thermal Interface Material Applications EV Chargers DC-DC Converters High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

1200 V, 11 mOhm, Silicon Carbide, Half-Bridge Module

Technical Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation
  • Aluminum Nitride Ceramic Substrate
  • Optional Pre-Applied Thermal Interface Material

Applications

  • EV Chargers
  • DC-DC Converters
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB011A12GM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB011A12GM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB011A12GM3
SIC, MODULE, 11M, 1200V, 48 MM

SIC, MODULE, 11M, 1200V, 48 MM

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-CAB011A12GM3-ND CAB011A12GM3 CAB011A12GM3
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module GM3 Chassis Mount
Unlock Full Specs
to access all available technical data